Multiphase Ceramic Layer on Semiconductor Packaging

This paper proposes a novel method to manufacture ceramic insulated metal substrate for power semiconductor modules and high-temperatureelectronics. $alpha $ -Al₂O₃–mullite (Al₆Si₂O₁₃)–AlN multiphase ceramic layer was fabricated on W80Cu20/Cr substrate at 1050 °C by firing.

The polycarbosilane-AlN green ceramic layer was synthesized by spin processor, and then was fired under a steady flow of wet nitrogen Al–Si–O nanocrystalline rods were formed and their diameters were about 100 nm. The $alpha $ -Al₂O₃–mullite–AlN multiphase ceramic layer had perfect interface bonding, and exhibited superior mechanical properties and thermal shock resistance.