Multiphase Ceramic Layer on Semiconductor Packaging
This paper proposes a novel method to manufacture ceramic insulated metal substrate for power semiconductor modules and high-temperatureelectronics. $alpha $ -Al2O3–mullite (Al6Si2O13)–AlN multiphase ceramic layer was fabricated on W80Cu20/Cr substrate at 1050 °C by firing.
The polycarbosilane-AlN green ceramic layer was synthesized by spin processor, and then was fired under a steady flow of wet nitrogen Al–Si–O nanocrystalline rods were formed and their diameters were about 100 nm. The $alpha $ -Al2O3–mullite–AlN multiphase ceramic layer had perfect interface bonding, and exhibited superior mechanical properties and thermal shock resistance.
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