Thermal for Monitoring of Power Semiconductor Devices


Thermal for Monitoring of Power Semiconductor Devices

A resistance-capacitance (RC) thermal network with temperature dependent thermal conductivities and heat capacitances is used to calculate the junction temperature of insulated gate bipolar transistor (IGBT) modules using a device model realized in Simulink. The collector current IC, collector-emitter voltage VCE, and the case temperature TC measured during the cycling, are used as input parameters of the proposed model.

The proposed model is easier to implement compared to thermo-sensitive electrical parameter (TSEP) method, and it is compared with a RC network with constant thermal conductivity and heat capacitance model and verified experimentally by using a TSEP method. The results of proposed model show an improvement of the accuracy for determining the junction temperature compare to the model with constant thermal conductivity and heat capacitanceonitoring of Power Semiconductor Devices.

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