High Temperature Reliability of Packaging Components


High Temperature Reliability of Packaging Components

In order to take the full advantage of the high-temperature SiC and GaN operating devices, package materials able to withstand high-temperature storage and large thermal cycles have been investigated. The temperature under consideration here are higher than 200 °C. Such temperatures are required for several potential applications such as down-hole oil and gas industry for well logging, aircrafts, automotive, and space exploration. This review focuses on the reliability of a selection of potential components or materials used in the package assembly as the substrates, the die attaches, the interconnections, and the encapsulation materials.

It reveals that, substrates with low coefficient of thermal expansion (CTE) conductors or with higher fracture resistant ceramics are potential candidates for high temperatures. Die attaches and interconnections reliable solutions are also available with the use of compatible metallization schemes. At this level, the reliability can also be improved by reducing the CTE mismatch between assembled materials. The encapsulation remains the most limiting packaging component since hard materials present thermomechanical reliability issues, while soft materials have low degradation temperatures. The review allows identifying reliable components and materials for high-temperature wide bandgap semiconductors and is expected to be very useful for researchers working for the development on high-temperature electronics.

 

 Related Power Electronics Projects:

  1. Influence of Power Electronic Converters on Current-Voltage Behaviors During Faults in DGU’s – Part ll: Photovoltaic Systems.
  2. Survey of High-Temperature Polymeric Encapsulants for Power Electronics Packaging.
  3. Editorial: IEEE Transactions on Power Electronics, February 2015.
  4. Mission Profile-Based Reliability Design and Real-Time Life Consumption   Estimation in Power Electronics.
  5. Piezoelectric Actuators With Integrated High-Voltage PowerElectronics.
  6. Computationally Efficient, Real-Time, and Embeddable Prognostic Techniques for Power Electronics.
  7. Single Active Switch Power Electronics for Kilowatt Scale Capacitive Power Transfer.
  8. Study and Handling Methods of Power IGBT Module Failures in Power Electronic Converter Systems.
  9. High-Temperature (250 °C?/?500 °F) 19 000 min BLDC Fan for Forced Air-Cooling of Advanced Automotive Power Electronics.
  10. Power Electronics Control of an Energy Regenerative Mechatronic Damper.
  11. Research on Unbalanced-Load Correction Capability of Two Power Electronic Transformer Topologies.
  12. A Storage Integrated Modular Power Electronic Interface for Higher Power Distribution Availability.
  13. Performance of Multistep Finite Control Set Model Predictive Control for Power Electronics.
  14. Real-Time Prediction of Power Electronic Device Temperatures Using PRBS-Generated Frequency-Domain Thermal Cross Coupling Characteristics.